Search results for "Rate equations"
showing 3 items of 3 documents
Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots
2012
We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples. © 2012 American Institute of Physics.
SIMULATION OF THERMAL EFFECTS IN OPTOELECTRONIC DEVICES USING COUPLED ENERGY-TRANSPORT AND CIRCUIT MODELS
2008
A coupled model with optoelectronic semiconductor devices in electric circuits is proposed. The circuit is modeled by differential-algebraic equations derived from modified nodal analysis. The transport of charge carriers in the semiconductor devices (laser diode and photo diode) is described by the energy-transport equations for the electron density and temperature, the drift-diffusion equations for the hole density, and the Poisson equation for the electric potential. The generation of photons in the laser diode is modeled by spontaneous and stimulated recombination terms appearing in the transport equations. The devices are coupled to the circuit by the semiconductor current entering the…
Simulation of mid-IR amplification in Er3+-doped chalcogenide microstructured optical fiber
2009
International audience; This paper deals with the design of an erbium doped microstructured optical fiber (MOF) amplifier operating in the mid-infrared (mid-IR) wavelength range, more precisely around 4.5 µm wavelength. A homemade numerical code which solves the rate equations and the power propagation equations has been ad hoc developed to theoretically investigate the feasibility of mid-IR MOF amplifier. On the basis of the measured energy level transition parameters of a Er3+-doped Ga5Ge20Sb10S65 chalcogenide glass, the amplifier feasibility is demonstrated exhibiting high gain and low noise figure.